Subthreshold Temperature Depedendence

Every once in awhile, one takes data that shows results which are different than previous work:

@article{card1979temperature,
  title={On the temperature dependence of subthreshold currents in MOS electron inversion layers},
  author={Card, HC and Ulmer, RW},
  journal={Solid-State Electronics},
  volume={22},
  number={5},
  pages={463--465},
  year={1979},
  publisher={Elsevier}
}	
The work by Card et al. was not incorrect, but we just do not see these issues on modern processes because of the self-alignment of gate doping.


Data sets

Card's 1979 data (card1979.tgz):
Extracted from the original paper using Datathief.